| Self-aligned wrapped-around structure JP Colinge, KC Ching, TP Guo, CH Diaz US Patent 9,209,247, 2015 | 547 | 2015 |
| Pi-gate soi mosfet JT Park, JP Colinge, CH Diaz IEEE Electron Device Letters 22 (8), 405-406, 2001 | 474 | 2001 |
| An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling CH Diaz, HJ Tao, YC Ku, A Yen, K Young IEEE Electron device letters 22 (6), 287-289, 2001 | 235 | 2001 |
| Multi-gate device and method of fabrication thereof KC Ching, CW Tsai, CH Diaz, CH Wang, WY Lien, YK Leung US Patent 9,818,872, 2017 | 216 | 2017 |
| Dynamic gate coupling of NMOS for efficient output ESD protection C Duvvury, C Diaz 30th Annual Proceedings Reliability Physics 1992, 141-150, 1992 | 191 | 1992 |
| Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application CH Chen, TL Lee, TH Hou, CL Chen, CC Chen, JW Hsu, KL Cheng, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 56-57, 2004 | 183 | 2004 |
| Multi-gate device and method of fabrication thereof KC Ching, CF Huang, CH Diaz, CH Wang, WH Hsieh, YK Leung US Patent 9,887,269, 2018 | 168 | 2018 |
| Method of fabricating a silicon-on-insulator semiconductor device with an implanted ground plane JP Colinge, CH Diaz US Patent 6,391,752, 2002 | 143 | 2002 |
| Non-volatile memory device having nanocrystal floating gate and method of fabricating same JP Colinge, CH Diaz US Patent 9,899,398, 2018 | 142 | 2018 |
| Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design B Kleveland, CH Diaz, D Vook, L Madden, TH Lee, SS Wong IEEE Journal of Solid-State Circuits 36 (10), 1480-1488, 2001 | 142 | 2001 |
| Quasi-surrounding gate and a method of fabricating a silicon-on-insulator semiconductor device with the same JP Colinge, CH Diaz US Patent 6,359,311, 2002 | 141 | 2002 |
| Monolithic CMOS distributed amplifier and oscillator B Kleveland, CH Diaz, D Vock, L Madden, TH Lee, SS Wong 1999 IEEE International Solid-State Circuits Conference. Digest of Technical …, 1999 | 134 | 1999 |
| Formation of an indium retrograde profile via antimony ion implantation to improve NMOS short channel effect HCH Wang, SY Lu, MC Chiang, CH Diaz US Patent 6,500,739, 2002 | 129 | 2002 |
| Horizontal gate-all-around device having wrapped-around source and drain CH Lin, CC Wu, CH Diaz, CH Wang, WH Hsieh, YM Sheu US Patent 10,109,721, 2018 | 122 | 2018 |
| Method of forming semiconductor structure with horizontal gate all around structure KC Ching, CW Tsai, CH Wang, CH Diaz US Patent 9,881,993, 2018 | 122 | 2018 |
| Multi-gate device and method of fabrication thereof KC Ching, CW Tsai, CH Diaz, CH Wang, WY Lien, YK Leung US Patent 10,157,799, 2018 | 118 | 2018 |
| A scaleable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics KW Su, YM Sheu, CK Lin, SJ Yang, WJ Liang, X Xi, CS Chiang, JK Her, ... Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003 …, 2003 | 110 | 2003 |
| Achieving uniform nMOS device power distribution for sub-micron ESD reliability Duvvury, Diaz, Haddock 1992 International Technical Digest on Electron Devices Meeting, 131-134, 1992 | 101 | 1992 |
| Cmos technology for ms/rf soc CH Diaz, DD Tang, JYC Sun IEEE Transactions on Electron Devices 50 (3), 557-566, 2003 | 100 | 2003 |
| Circuit-level electrothermal simulation of electrical overstress failures in advanced MOS I/O protection devices CH Diaz, SM Kang, C Duvvury IEEE transactions on computer-aided design of integrated circuits and …, 1994 | 100 | 1994 |
