| Next generation of Ge1− ySny (y= 0.01-0.09) alloys grown on Si (100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission G Grzybowski, RT Beeler, L Jiang, DJ Smith, J Kouvetakis, J Menendez Applied physics letters 101 (7), 2012 | 135 | 2012 |
| Compositional dependence of the direct and indirect band gaps in Ge1− ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover … L Jiang, JD Gallagher, CL Senaratne, T Aoki, J Mathews, J Kouvetakis, ... Semiconductor Science and Technology 29 (11), 115028, 2014 | 128 | 2014 |
| Direct versus indirect optical recombination in Ge films grown on Si substrates G Grzybowski, R Roucka, J Mathews, L Jiang, RT Beeler, J Kouvetakis, ... Physical Review B—Condensed Matter and Materials Physics 84 (20), 205307, 2011 | 94 | 2011 |
| Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys JD Gallagher, C Xu, L Jiang, J Kouvetakis, J Menendez Applied Physics Letters 103 (20), 2013 | 67 | 2013 |
| Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications L Jiang, C Xu, JD Gallagher, R Favaro, T Aoki, J Menéndez, J Kouvetakis Chemistry of Materials 26 (8), 2522-2531, 2014 | 60 | 2014 |
| Ge1-ySny (y= 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties CL Senaratne, JD Gallagher, L Jiang, T Aoki, DJ Smith, J Menéndez, ... Journal of Applied Physics 116 (13), 2014 | 59 | 2014 |
| Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10) G Grzybowski, L Jiang, RT Beeler, T Watkins, AVG Chizmeshya, C Xu, ... Chemistry of Materials 24 (9), 1619-1628, 2012 | 54 | 2012 |
| Photoluminescence from heavily doped GeSn: P materials grown on Si (100) G Grzybowski, L Jiang, J Mathews, R Roucka, C Xu, RT Beeler, ... Applied Physics Letters 99 (17), 2011 | 51 | 2011 |
| New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case C Xu, RT Beeler, L Jiang, G Grzybowski, AVG Chizmeshya, J Menéndez, ... Semiconductor science and technology 28 (10), 105001, 2013 | 45 | 2013 |
| Nanosynthesis Routes to New Tetrahedral Crystalline Solids: Silicon-like Si3AlP T Watkins, AVG Chizmeshya, L Jiang, DJ Smith, RT Beeler, G Grzybowski, ... Journal of the American Chemical Society 133 (40), 16212-16218, 2011 | 40 | 2011 |
| Optical properties of Ge1-x-ySixSny alloys with y> x: Direct bandgaps beyond 1550 nm C Xu, L Jiang, J Kouvetakis, J Menéndez Applied Physics Letters 103 (7), 2013 | 39 | 2013 |
| Synthesis and optical properties of Sn-rich Ge1–x–ySixSny materials and devices C Xu, RT Beeler, L Jiang, JD Gallagher, R Favaro, J Menéndez, ... Thin Solid Films 557, 177-182, 2014 | 37 | 2014 |
| Annealing and impurity effects in Co thin films for MOL contact and BEOL metallization J Kelly, V Kamineni, X Lin, A Pacquette, M Hopstaken, Y Liang, ... Journal of the Electrochemical Society 166 (1), D3100, 2018 | 25 | 2018 |
| Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices RT Beeler, J Gallagher, C Xu, L Jiang, CL Senaratne, DJ Smith, ... ECS Journal of Solid State Science and Technology 2 (9), Q172, 2013 | 25 | 2013 |
| An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines RS Smith, ET Ryan, CK Hu, K Motoyama, N Lanzillo, D Metzler, L Jiang, ... AIP Advances 9 (2), 2019 | 24 | 2019 |
| Precise junction placement in vertical semiconductor devices using etch stop layers H Bu, L Jiang, SO Koswatta, J Wang US Patent 9,954,101, 2018 | 24 | 2018 |
| Synthesis and materials properties of Sn/P-doped Ge on Si (100): photoluminescence and prototype devices RT Beeler, GJ Grzybowski, R Roucka, L Jiang, J Mathews, DJ Smith, ... Chemistry of Materials 23 (20), 4480-4486, 2011 | 24 | 2011 |
| (Si) 5− 2y (AlP) y alloys assembled on Si (100) from Al-P-Si3 building units T Watkins, L Jiang, C Xu, AVG Chizmeshya, DJ Smith, J Menendez, ... Applied Physics Letters 100 (2), 2012 | 18 | 2012 |
| Synthesis and Properties of Monocrystalline Al(As1–xPx)Si3 Alloys on Si(100) G Grzybowski, T Watkins, RT Beeler, L Jiang, DJ Smith, AVG Chizmeshya, ... Chemistry of Materials 24 (12), 2347-2355, 2012 | 16 | 2012 |
| Machine learning and hybrid metrology using scatterometry and LE-XRF to detect voids in copper lines D Kong, K Motoyama, H Huang, B Mendoza, M Breton, GR Muthinti, ... Metrology, Inspection, and Process Control for Microlithography XXXIII 10959 …, 2019 | 14 | 2019 |
